| Sl. No. | Name | Topic | Supervisor | Current position | Duration |
| 1. | Mohd. Kaif | Development of 2D Schrödinger–Poisson Solver with 1D NEGF Transport for Common Double-Gate Nanoscale MOSFET | Sitangshu Bhattacharya | - | 2025-2026 |
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| 2. | Akshat Srivastava | Rashba Effects in 2D semiconductors | Sitangshu Bhattacharya | - | 2025-2026 |
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| 3. | Ananya Chandra | NEGF code development | Sitangshu Bhattacharya | HCL Tech | 2024-2025 |
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| 4. | Tanushree Seal | Machine learning algorithms for electron and hole mobility predictions | Sitangshu Bhattacharya | Qualcomm | 2024-2025 |
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| 5. | Avani Shikha Mishra | NEGF transport development in 2D materials | Sitangshu Bhattacharya | Tech Mahindra | 2023-2024 |
| 6. | Pratyush Kumar Ojha | Tight binding theory in 2D materials | Sitangshu Bhattacharya | Synopsis | 2022-2023 |
| 7. | Debashis Nath | Quantum Capacitances in nanoscale MOSFETs. | Sitangshu Bhattacharya | C-DOT, Research Scientist | 2022-2023 |
| 8. | Danish Waheed | Electronic transport in nanoscale transistors | Sitangshu Bhattacharya | Qualcomm | 2020-2021 |
| 9. | Tutumoni Doley | Ab-initio analysis of stabilitzation of few layer heterostructures. | Sitangshu Bhattacharya | Micron | 2020-2021 |
| 10. | Avantika Kureel | Computational coding in density functional theory | Sitangshu Bhattacharya | - | 2019-2020 |
| 11. | Gururaj K A | Computational electronic resistivity and mobility in h-BN. | Sitangshu Bhattacharya | - | 2019-2020 |
| 12. | Shiv Gopal Yadav | First principles calculations in ground state electronic properties of MoS2-graphene heterostructures. | Sitangshu Bhattacharya | - | 2014-2016 |
| 13. | Mithun P | First principles calculations in Seebeck coefficients in MoS2 monolayers. | Sitangshu Bhattacharya | - | 2014-2016 |
| 14. | Vijay Singh | First principles calculations of thermal conductivities in h-BN monolayers. | Sitangshu Bhattacharya | - | 2014-2016 |
| 15. | Abhijeet Pathak | First principles calculations of electronic resistivities in WSe2 monolayers. | Sitangshu Bhattacharya | Ph.D at IIIT Jabalpur | 2014-2016 |
| 16. | Praveen Dwivedi | Physics of double-gate MOSFETs. | Sitangshu Bhattacharya | Ph.D at IIT Indore, now Research establishment officer at IIT Kanpur | 2014-2016 |