RESEARCH THRUST AREAS

FACULTY INVOLVED: REKHA VERMA

 

          FACULTY INVOLVED: REKHA VERMA

 

Typical I-V relation of a double gate Graphene transistors. Adapted from Nature Nanotech., vol. 5, pp. 487, (2010).

FACULTY INVOLVED: SITANGSHU BHATTACHARYA

Thermoelectric module showing the direction of charge flow on both cooling and power generation. Adapted from Nature Mat., vol. 7, pp. 105, (2008).

In view of VLSI circuits, in last few years it has been observed that with the increasing hot-spots due to the addition of trillions of transistors inside an integrated chip in a VLSI device, micro -TE based sensors are in high demand because of their ability to drive other devices efficiently from the waste heat generated from the chip where the temperature rise could be as high as 100 0C.

The primary goal of this domain of research is mathematically analyzing the overall stability and efficiency of a TE device that can extract and channel the heat from the chip. The proposed model can then be used efficiently to estimate the electrical and thermal properties of thermoelectric materials as well as their arrays at such geometries and analyse their performances as miniaturized Thermoelectric Generators (TEGs) and coolers. Conventionally, the efficiency (η) of a TE material is measured via the dimensionless “Thermoelectric Figure of Merit (TFM)”, generally denoted as ZT and depends solely on the materials’ Seebeck coefficient (S), Electrical conductivity (σ) and electronic thermal conductivity (κe) and lattice thermal conductivity (κph). Typical values of a very good ZT are in the range of 1, 2 and 3 and finds practical applications as TEGs and coolers and in commercial and industrial sectors. However, achieving a value of more than 2 is horrendously challenging, given a specific operating temperature zone, and requires severe amount of material assortment and design, together with optimization of charge carriers densities and material dimensionality.

FACULTY INVOLVED: SITANGSHU BHATTACHARYA

FACULTY INVOLVED: SITANGSHU BHATTACHARYA

 

Adapted from PRB, vol. 67., pp. 241403R1 (2003). (a) Thermoelectric effects over a molecule with two contacts at different temperatures T1 , T2. (b), (c) Equivalent circuits defining the voltage, conductance, and current.

FACULTY INVOLVED: SITANGSHU BHATTACHARYA

FACULTY INVOLVED: SITANGSHU BHATTACHARYA

NET LAB NEWS:

June 12-21, 2017: Dr. Rekha Verma and Dr. Sitangshu Bhattacharya conducted a short term course on "Quantum Transport Phenomena" at IIT Gandhinagar Details ...

March 9, 2017: Dr. Rekha Verma participated and presented her work on “Graphene based in-chip thermoelectric generator” at the 9th Indo-German Frontiers of Engineering Symposium 2017 March 9-12, 2017, Jaipur, India, co-organized by the Department of Science and Technology (DST)-India and the Alexander von Humboldt Foundation. https://www.humboldt-foundation.de/web/indogfoe-2017.html Details ...

March 3, 2017: Dr. Sitangshu Bhattacharya delivered a talk on “Role of Feynman Diagrams in Energy Band Structure of Materials-A Post Density Functional Theory Approach ” during IEEE Workshop on Compact Modeling at IIT Kanpur. https://www.iitk.ac.in/nanolab/Workshop/index.html

November 19, 2016: Dr. Rekha Verma and Dr. Sitangshu Bhattacharya have organized first one day IEEE Workshop on Electron Devices 2016 (WED’16) under IEEE EDS UP chapter at IIIT Allahabad.

February 8th, 2017: Miss. Suchitra kumari Joined our Lab as a Junior research fellow.

January 16th, 2017: Mr. Neelesh Gupta Joined our Lab as a PhD student.

January 16th, 2017: Mr. Anup Shrivastava Joined our Lab as a PhD student.
NET LAB

Faculties involved

Sitangshu Bhattacharya
Assistant Professor, Ph.D: Jadavpur University, 2009, India.

Rekha Verma
Assistant Professor, Ph.D: IISc Bangalore, 2013, India.


Research interests:
Computational Nanoelectronics:
Many-Body Perturbation Formulations of Electrical & Phonon Transport in 2D materials, Physics of Excitons and Surface Passivations, Thermoelectricity, Self-Heating in Interconnects
//