RESEARCH THRUST AREAS

FACULTY INVOLVED: REKHA VERMA

 

          FACULTY INVOLVED: REKHA VERMA

 

Typical I-V relation of a double gate Graphene transistors. Adapted from Nature Nanotech., vol. 5, pp. 487, (2010).

FACULTY INVOLVED: SITANGSHU BHATTACHARYA

Thermoelectric module showing the direction of charge flow on both cooling and power generation. Adapted from Nature Mat., vol. 7, pp. 105, (2008).

In view of VLSI circuits, in last few years it has been observed that with the increasing hot-spots due to the addition of trillions of transistors inside an integrated chip in a VLSI device, micro -TE based sensors are in high demand because of their ability to drive other devices efficiently from the waste heat generated from the chip where the temperature rise could be as high as 100 0C.

The primary goal of this domain of research is mathematically analyzing the overall stability and efficiency of a TE device that can extract and channel the heat from the chip. The proposed model can then be used efficiently to estimate the electrical and thermal properties of thermoelectric materials as well as their arrays at such geometries and analyse their performances as miniaturized Thermoelectric Generators (TEGs) and coolers. Conventionally, the efficiency (η) of a TE material is measured via the dimensionless “Thermoelectric Figure of Merit (TFM)”, generally denoted as ZT and depends solely on the materials’ Seebeck coefficient (S), Electrical conductivity (σ) and electronic thermal conductivity (κe) and lattice thermal conductivity (κph). Typical values of a very good ZT are in the range of 1, 2 and 3 and finds practical applications as TEGs and coolers and in commercial and industrial sectors. However, achieving a value of more than 2 is horrendously challenging, given a specific operating temperature zone, and requires severe amount of material assortment and design, together with optimization of charge carriers densities and material dimensionality.

FACULTY INVOLVED: SITANGSHU BHATTACHARYA

FACULTY INVOLVED: SITANGSHU BHATTACHARYA

 

Adapted from PRB, vol. 67., pp. 241403R1 (2003). (a) Thermoelectric effects over a molecule with two contacts at different temperatures T1 , T2. (b), (c) Equivalent circuits defining the voltage, conductance, and current.

FACULTY INVOLVED: SITANGSHU BHATTACHARYA

FACULTY INVOLVED: SITANGSHU BHATTACHARYA

NET LAB NEWS:

1st June, 2016: Miss Himani Mishra Joined our Lab as a Int. PhD student. Details ...

3rd May, 2016: Dr. Rekha Verma was elected as Vice-Chair of IEEE-EDS Uttar Pradesh Section. Details ...

14th January 2016: JRF Opening: There is an opening of a JRF position in NET LAB for the project related to graphene transistors. Details ...
NET LAB

Faculties involved

Sitangshu Bhattacharya
Assistant Professor, Ph.D: Jadavpur University, 2009, India.

Rekha Verma
Assistant Professor, Ph.D: IISc Bangalore, 2013, India.


Research interests:
Computational Nanoelectronics:
Many-Body Perturbation Formulations of Electrical & Phonon Transport in 2D materials, Physics of Excitons and Surface Passivations, Thermoelectricity, Self-Heating in Interconnects
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