NET LAB NEWS:
July 13, 2018: Our work on exciton-phonon couplings got accepted in Physical Reviw B. In this work, we demonstrated how exciton couples with phonon in monolayer WSe2 to give brightest and strongest photo-luminecscence.
June 12-21,2017: Dr. Rekha Verma and Dr. Sitangshu Bhattacharya conducted a short term course on "Quantum Transport Phenomena" at IIT Gandhinagar during June 12-21, 2016 .
March 9, 2017: Dr. Rekha Verma participated and presented her work on “Graphene based in-chip thermoelectric generator” at the 9th Indo-German Frontiers of Engineering Symposium 2017 March 9-12, 2017, Jaipur, India, co-organized by the Department of Science and Technology (DST)-India and the Alexander von Humboldt Foundation. https://www.humboldt-foundation.de/web/indogfoe-2017.html The Indo-German Frontiers of Engineering Symposia (INDOGFOE) are a series of interdisciplinary, binational conferences which are co-organized by the Indian Department of Science and Technology (DST) and the Alexander von Humboldt Foundation. Funding on the German side is provided by the Federal Ministry of Education and Research. The activity brings together outstanding, early-career German and Indian engineers and natural scientists from industry, universities, and other research institutions to introduce their areas of engineering research and technical work, thereby facilitating an interdisciplinary transfer of knowledge and methodology that could eventually lead to the development of cooperative networks of young scientists from both countries. .
March 3, 2017: Dr. Sitangshu Bhattacharya delivered a talk on “Role of Feynman Diagrams in Energy Band Structure of Materials-A Post Density Functional Theory Approach ” during IEEE Workshop on Compact Modeling at IIT Kanpur. https://www.iitk.ac.in/nanolab/Workshop/index.html.
November 19, 2016: Dr. Rekha Verma and Dr. Sitangshu Bhattacharya have organized first one day IEEE Workshop on Electron Devices 2016 (WED’16) under IEEE EDS UP chapter at IIIT Allahabad.
February 8th, 2017: Miss Suchitra Kumari joined our lab as Junior Research Fellow.
January 16th, 2017: Mr Neelesh Gupta joined our lab as Research Scholar.
January 16th, 2017: Mr Anup Shrivastava joined our lab as Research Scholar.
December 21st, 2016: Mr Anindya Bose joined our lab as Junior Research Fellow.
June 1st, 2016: Miss HImani MIshra joined our lab as an Int. PhD student. Her research area is First Principles Calculation of Physics of Excitons in 2D Transitational Metal Dichalcogenides.
May 3rd, 2016: Dr. Rekha Verma was selected as Vice-Chair of IEEE Electron Device Society Uttar Pradesh Chapter.
December 3rd, 2015: Our paper entitled "First Principles Calculations of Bonding and Charges at the Al2O3 Interface in a c-Si/SiO2/am-Al2O3 Structure Applicable for the Surface Passivation of Silicon-Based Solar Cells" is accepted in IEEE Transaction on Electron Devices. Using first principles theory, we demostrate for the first time the bonding and charge rearrangement at the interface of c-Si/SiO2/am-Al2O3 structure. Our methodologies indicates that at the interface there is a decrease (increase) of the tetrahedrally (octahedrally) coordinated Al atoms and an increment of the average charge on Al atoms. These phenomena could be the reasons for the existence of the negative fixed charges at the c-Si/am-Al2O3 interface.
December 1st, 2015: Dr. Sitangshu Bhattacharya recieved the Young Scietist Grant Award 2015-2018 from Department of S&T, Govt. India. The project is based on analytical findings pertaining to Graphene transistors.
December 2nd, 2015: Dr. Rekha Verma recieved the Young Scietist Grant Award 2015-2018 from Department of S&T, Govt. India. The project is based on analytical findings pertaining to SIlicon nanowire thermoelectrics.
July 24th, 2015: We succesfully organized a workshop on COMSOL Multiphysics, arranged by Dr. Rekha Verma and Dr. Sitangshu Bhattacharya@ECE departmment. The response of people from IIIT-Allahabad and MNNIT-Allahabad was overwhleming.
July 18th, 2015: We congratulate Mr. Shiv Gopal Yadav, Mr. Vijay Kumar Singh and Mr. Abhijeet Pathak for successfully completion of their MTech dissertations. Mr. Yadav's work is based on analytical modeling of near equillibrium current transport in graphene based FETs which exclusively captures the ambipolar behavior of graphene FETs. Mr. Vijay's work is based on the in-house development of self-consistant NEGF code using MATLAB that captures the current transport behavior of graphene nanoribbon FETs that also contains the elastic scattering effects, commonly found in these FETs. Mr. Abhejeet's work encompasses the inhouse developement of NEGF MATLAB code and compiling with the self-consistant self-heating effect in monolayer of Boron Nitride based FETs.
May 5th, 2015: Dr. Sitangshu Bhattacharya has been enlisted in the IEEE Electron Device Society Golden list of Reviewer-2014. http://eds.ieee.org/publications/517-2013-t-ed-golden-reviewers
February 2nd, 2015: Dr. Rekha Verma received the prestigious TechnoInventor Award 2014 by India Electronics and Semiconductor Association (IESA) for her outstanding research contribution in PhD thesis. The award carries a citation and a cash prize of INR 75,000. The award is conferred by Indian Electronics Semiconductor Association (IESA).
September 13th, 2014: Dr. Sitangshu Bhattacharya's paper entitled "A continuous electrical conductivity model for monolayer graphene from near intrinsic to far extrinsic region" has been selected for publication in IEEE-TED in the October issue. In this paper, we have derived a continuous model of chemical potential for single layer graphene which spans from temperature T<< TF (Fermi temperature) to T>>TF. The model is used to provide a thumb rule to predict graphene electrical conductivity for all temperatures. Earlier prediction were made at either near-intrinsic of highly extrinsic graphene sample cases.