Assistant Professor

Department of Electronics and Communication Engineering, IIIT Allahabad

Office: Room No. 2122 (CC-I), IIIT Allahabad

Email: prasanna@iiita.ac.in

Contact No: 0532-2922111

About Me:

After graduating from the department of Electrical Engineering, IIT Kanpur with a PhD degree, I joined as a faculty member in the department of Electronics and Communication Engineering, IIIT Allahabad in June 2014. I am also associated with the VLSI Design/EDA laboratory of IIIT Allahabad. This laboratory has industry standard EDA tools (Cadence, Synopsys, Mentor Graphics, Xilinx, TCAD) and state-of-the-art technology design kits for designing integrated circuits and systems.

Research Areas:

  1. Semiconductor device design and modeling
  2. Analog/RF integrated circuit design
  3. VLSI system design

Courses:

  1. Circuit Analysis and Synthesis (ECAS130C)
  2. Microprocessor Interface and Programming(EMIP432C)
  3. Hardware Design Methodology (EHDM630E)
  4. Embedded System Design (EESD732C)

Publications:

Journal Publications:

  1. Prasanna Kumar Misra and S. Qureshi, “Impact of Collector Length on the Performance of NPN SiGe HBT on Thin Film SOI,” Journal of Low Power Electronics, Vol. 10, No 3, September 2014, pp. 392-398.
  2. Prasanna Kumar Misra and S. Qureshi, “A 32 nm NPN SOI HBT with Programmable Power Gain and 839 GHzV ftBVCEO Product,” Journal of Semiconductor Technology and Science, Vol.14, No.6, December 2014, pp. 712-717.
  3. Prasanna Kumar Misra and S. Qureshi, “Epilayer Optimization of NPN SiGe HBT with n+ Buried Layer Compatible with Fully Depleted SOI CMOS Technology,” Journal of Semiconductor Technology and Science, Vol.14, No.3, June, 2014, pp. 274-283.
  4. Prasanna Kumar Misra and S. Qureshi, “A Technique to Improve the Performance of NPN HBT on thin film SOI,” IEEE Journal of the Electron Devices Society, Vol. 1, No. 4, April 2013, pp. 92-98.
  5. Prasanna Kumar Misra and S. Qureshi, “Impact of Ge profile on the performance of PNP SiGe HBT on thin film SOI,” International Society for Optics and Photonics Proceedings, Vol. 8549, October 2012.

Conference Publications:

  1. Prasanna Kumar Misra and S. Qureshi, “Analog/RF Performance of NPN SiGe HBT on Thin Film SOI Over -55 to  +125 degC Temperature  Range.” International Semiconductor Device Research Symposium, December 2013.
  2. Prasanna Kumar Misra and S. Qureshi, “Process and Device Simulations to Study The Impact of Ge Profile of 65 nm NPN SOI HBT with Buried Layer,” IEEE INDICON, December 2013.
  3. Prasanna Kumar Misra and S. Qureshi, “Speed Enhancement Of npn SiGe HBT On Thin Film SOI and Thin BOX Using Substrate Bias in (0V-3V) Range,” IEEE TENCON, November 2011, Indonesia, pp. 797-801.
  4. Prasanna Kumar Misra and S. Qureshi, “Impact of Ge profile on the performance of PNP SiGe HBT on thin film SOI,” IWPSD 2011.

 

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